BFG193 NPN Silicon RF Transistor* * For low noise, high-gain amplifiers up to 2 GHz * For linear broadband amplifiers 4 3 2 * fT = 8 GHz, F = 1 dB at 900 MHz 1 * Pb-free (RoHS compliant) package 1) * Qualified according AEC Q101 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFG193 Marking Pin Configuration BFG193 1 = E 2 = B 3 = E 4 = C - Package - SOT223 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 80 Base current IB 10 Total power dissipation2) Ptot 600 mW Junction temperature Tj 150 C Ambient temperature TA -55 ... 150 Storage temperature T stg -55 ... 150 V mA TS 87C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point 3) RthJS 105 K/W 1Pb-containing 2T package may be available upon special request is measured on the collector lead at the soldering point to the pcb S 3For calculation of RthJA please refer to Application Note Thermal Resistance 2007-04-20 1 BFG193 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. 12 - - V ICES - - 100 A ICBO - - 100 nA IEBO - - 1 A hFE 70 100 140 DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, I E = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain- - IC = 30 mA, VCE = 8 V, pulse measured 2007-04-20 2 BFG193 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 6 8 - Ccb - 0.59 0.9 Cce - 0.4 - Ceb - 2.5 - GHz IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure dB F IC = 10 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz - 1 - IC = 10 mA, VCE = 8 V, ZS = ZSopt , f = 1.8 GHz - 1.6 - - 16 - - 10.5 - Power gain, maximum available1) G ma IC = 30 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt , f = 900 MHz IC = 30 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz |S21e|2 Transducer gain dB IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz - 13.5 - IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 1.8 GHz - 8 - 1/2 ma = |S21 / S12| (k-(k-1) ) 1G 2007-04-20 3 BFG193 Total power dissipation Ptot = (TS) Permissible Pulse Load RthJS = (t p) 10 3 700 mW K/W 600 550 RthJS Ptot 500 450 10 2 400 350 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 300 250 10 1 200 150 100 50 0 0 20 40 60 80 100 120 C 10 0 -7 10 150 TS 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp Permissible Pulse Load Ptotmax/P totDC = (tp) Ptotmax /PtotDC 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 2007-04-20 4 0 Package SOT223 1.60.1 6.5 0.2 A 0.1 MAX. 3 0.1 7 0.3 3 2 0.5 MIN. 1 2.3 0.7 0.1 B 15 MAX. 4 3.5 0.2 Package Outline BFG193 4.6 0.28 0.04 0...10 0.25 M A 0.25 M B Foot Print 1.4 4.8 1.4 3.5 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel o180 mm = 1.000 Pieces/Reel Reel o330 mm = 4.000 Pieces/Reel 0.3 MAX. 7.55 12 8 Pin 1 1.75 6.8 2007-04-20 5 BFG193 Edition 2006-02-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2007-04-20 6